Fuel cells are energy-conversion solutions that generate electricity via electrochemical reactions without combustion, thus not contributing to the pollution of air on Earth. These cells could power various technologies, ranging from electric vehicles to portable chargers and industrial machines.

Despite their advantages, many fuel cell designs introduced to date rely on expensive materials and precious metal catalysts, which limits their widespread adoption. Anion-exchange-membrane fuel cells (AEMFCs) could help to tackle these challenges, as they are based on Earth-abundant, low-cost catalysts and could thus be more affordable.

In recent years, many research groups worldwide have been designing and testing new AEMFCs. While some existing devices achieved promising results, most of the non-precious metals serving as catalysts were found to be prone to self-oxidation, which causes the irreversible failure of the cells.

ARLINGTON, Va. — Two SpaceX-built satellites successfully exchanged data using optical communications terminals in a milestone for the U.S. Space Development Agency (SDA), the agency’s director Derek Tournear said Sept. 4.

The satellites, part of SDA’s Tranche 0 experimental spacecraft in low Earth orbit, used laser terminals manufactured by Tesat-Spacecom to communicate. This marks the first time the agency has demonstrated laser communications in space using optical terminals compliant with military standards required for SDA satellites.

“We had not previously demonstrated laser communications,” Tournear said at a DefenseNews conference. He reported that the data exchange occurred on September 3, with the satellites establishing a connection in under 100 seconds and maintaining it for several hours.

“We have demonstrated that high-performance and environmentally sustainable lithium-ion batteries are not only possible, but also within reach.” Scientists convert waste from solar panels into advanced battery technology — and it could solve major issues with clean energy first appeared on The Cool Down.

State media Xinhua issued a brief report on Sept. 5 (Eastern), confirming the spacecraft’s return to Earth. The report provided no images, nor information regarding the mission and its landing site.

The “success of the experiment demonstrates the growing maturity of China’s reusable spacecraft technologies, which will pave the way for more convenient and affordable round-trip methods for the peaceful use of space in the future,” the report read.

The big picture: The US is committed to establishing semiconductor manufacturing within its borders, and perhaps no effort is more crucial to this goal than TSMC’s three-fab facility in Arizona. The government is pouring billions into the development, alongside TSMC’s $65 billion investment.

Taiwan Semiconductor Manufacturing Co. has reached a significant milestone in its expansion into the US. Recent trial production at the company’s new Arizona facility has yielded results comparable to those of its established plants in Taiwan, according to Bloomberg, which cited a person familiar with the company who requested anonymity. This development is a positive sign for the chipmaker’s ambitious US project, which has faced delays and doubts about whether it could match the production efficiency of its Taiwanese operations.

The Arizona plant began engineering wafer production in April using advanced 4-nanometer process technology. With production yields now on par with its facilities in Tainan, Taiwan, TSMC should be able to maintain its targeted gross margin rates of 53 percent or higher.

Two-dimensional (2D) semiconducting materials have distinct optoelectronic properties that could be advantageous for the development of ultra-thin and tunable electronic components. Despite their potential advantages over bulk semiconductors, optimally interfacing these materials with gate dielectrics has so far proved challenging, often resulting in interfacial traps that rapidly degrade the performance of transistors.

Researchers at King Abdullah University of Science and Technology (KAUST), Soochow University and other institutes worldwide recently introduced an approach that could enable the fabrication of better performing transistors based on 2D semiconductors. Their proposed design, outlined in a paper in Nature Electronics, entails the use of hexagonal boron nitride (h-BN) dielectrics and metal gate electrodes with a high cohesive energy.

“Initially, we found that when we use platinum (Pt) as an anode, the h-BN stack is less likely to trigger dielectric breakdown,” Yaqing Shen, first author of the paper, told Tech Xplore. “Based on this finding, we designed our experiments and found that Pt/h-BN gate stacks show 500-times lower leakage current than Au/h-BN gate stacks and exhibit a high dielectric strength of at least 25 MV/cm. This gave us the idea of using CVD h-BN as a gate dielectric in 2D transistors.”

In the rapidly evolving world of 3D printing, the pursuit of faster, more efficient and versatile production methods is never-ending. Traditional 3D printing techniques, while groundbreaking, are often time-consuming and limited in the kinds of materials they can use as feedstock.

But, through a new process a Lawrence Livermore National Laboratory (LLNL) team is calling Microwave Volumetric Additive Manufacturing (MVAM), researchers have introduced an innovative new approach to 3D printing using microwave energy to cure materials, opening the door to a broader range of materials than ever before.

In a recent paper published in Additive Manufacturing Letters, LLNL researchers describe the potential of microwave energy to penetrate a wider range of materials compared to light-based volumetric additive manufacturing (VAM).

Neutron stars are timelike matter with a maximum mass of about 2.34 solar masses in quantum chromodynamics (the strong color force). Black holes are spacelike matter that have no maximum mass, but a minimum mass of 2.35 solar masses. Indeed, black holes have been identified with millions or billions of solar masses.

In work published in Science Advances, Hayato Goto from the RIKEN Center for Quantum Computing in Japan has proposed a new quantum error correction approach using what he calls “many-hypercube codes.”