A new study led by researchers at the University of Minnesota Twin Cities is providing new insights into how next-generation electronics, including memory components in computers, breakdown or degrade over time. Understanding the reasons for degradation could help improve efficiency of data storage solutions.
The research is published in ACS Nano (“Uncovering Atomic Migrations Behind Magnetic Tunnel Junction Breakdown”).
For the first time, researchers were able to observe a “pinhole” within a device and observe how it degrades in real-time. (Image: Mkhoyan Lab, University of Minnesota)
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