The monolithic 3D integration of 2D molybdenum disulfide memtransistors and graphene chemitransistors can be used to create near-sensor computing chips with high interconnect density and a vertical separation between tiers of less than 50 nm.
The monolithic 3D integration of 2D molybdenum disulfide memtransistors and graphene chemitransistors can be used to create near-sensor computing chips with high interconnect density and a vertical separation between tiers of less than 50 nm.
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