Lifeboat Foundation

Growth of data eases the way to access the world but requires increasing amounts of energy to store and process. Neuromorphic electronics has emerged in the last decade, inspired by biological neurons and synapses, with in-memory computing ability, extenuating the ‘von Neumann bottleneck’ between the memory and processor and offering a promising solution to reduce the efforts both in data storage and processing, thanks to their multi-bit non-volatility, biology-emulated characteristics, and silicon compatibility. This work reviews the recent advances in emerging memristive devices for artificial neuron and synapse applications, including memory and data-processing ability: the physics and characteristics are discussed first, i.e., valence changing, electrochemical metallization, phase changing, interfaced-controlling, charge-trapping, ferroelectric tunnelling, and spin-transfer torquing. Next, we propose a universal benchmark for the artificial synapse and neuron devices on spiking energy consumption, standby power consumption, and spike timing. Based on the benchmark, we address the challenges, suggest the guidelines for intra-device and inter-device design, and provide an outlook for the neuromorphic applications of resistive switching-based artificial neuron and synapse devices.

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Memristors have recently attracted significant interest due to their applicability as promising building blocks of neuromorphic computing and electronic systems. The dynamic reconfiguration of memristors, which is based on the history of applied electrical stimuli, can mimic both essential analog synaptic and neuronal functionalities. These can be utilized as the node and terminal devices in an artificial neural network. Consequently, the ability to understand, control, and utilize fundamental switching principles and various types of device architectures of the memristor is necessary for achieving memristor-based neuromorphic hardware systems. Herein, a wide range of memristors and memristive-related devices for artificial synapses and neurons is highlighted. The device structures, switching principles, and the applications of essential synaptic and neuronal functionalities are sequentially presented. Moreover, recent advances in memristive artificial neural networks and their hardware implementations are introduced along with an overview of the various learning algorithms. Finally, the main challenges of the memristive synapses and neurons toward high-performance and energy-efficient neuromorphic computing are briefly discussed. This progress report aims to be an insightful guide for the research on memristors and neuromorphic-based computing.

Keywords: artificial neural networks; artificial neurons; artificial synapses; memristive electronic devices; memristors; neuromorphic electronics.

© 2020 Wiley-VCH GmbH.

Brain-inspired neuromorphic computing and portable intelligent electronic products have received increasing attention. In the present work, nanocellulose-gated indium tin oxide neuromorphic transistors are fabricated. The device exhibits good electrical performance. Short-term synaptic plasticities were mimicked, including excitatory postsynaptic current, paired-pulse facilitation, and dynamic high-pass synaptic filtering. Interestingly, an effective linear synaptic weight updating strategy was adopted, resulting in an excellent recognition accuracy of ∼92.93% for the Modified National Institute of Standard and Technology database adopting a two-layer multilayer perceptron neural network. Moreover, with unique interfacial protonic coupling, anxiety disorder behavior was conceptually emulated, exhibiting “neurosensitization”, “primary and secondary fear”, and “fear-adrenaline secretion-exacerbated fear”. Finally, the neuromorphic transistors could be dissolved in water, demonstrating potential in “green” electronics. These findings indicate that the proposed oxide neuromorphic transistors would have potential as implantable chips for nerve health diagnosis, neural prostheses, and brain-machine interfaces.

Keywords: anxiety disorders; neuromorphic computing; oxide neuromorphic transistors; proton coupling; synaptic plasticity.

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Recently, neuromorphic computing has been proposed to overcome the drawbacks of the current von Neumann computing architecture. Especially, spiking neural network (SNN) has received significant attention due to its ability to mimic the spike-driven behavior of biological neurons and synapses, potentially leading to low-power consumption and other advantages. In this work, we designed the indium-gallium-zinc oxide (IGZO) channel charge-trap flash (CTF) synaptic device based on a HfO₂/Al₂O₃/Si₃N₄/Al₂O₃ layer. Our IGZO-based CTF device exhibits synaptic functions with 128 levels of synaptic weight states and spike-timing-dependent plasticity. The SNN-restricted Boltzmann machine was used to simulate the fabricated CTF device to evaluate the efficiency for the SNN system, achieving the high pattern-recognition accuracy of 83.9%. We believe that our results show the suitability of the fabricated IGZO CTF device as a synaptic device for neuromorphic computing.

Keywords: charge trap flash; neuromorphic computing; nonvolatile memory; oxide semiconductor; spiking neural network.

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Owing to the 4th Industrial Revolution, the amount of unstructured data, such as voice and video data, is rapidly increasing. Brain-inspired neuromorphic computing is a new computing method that can efficiently and parallelly process rapidly increasing data. Among artificial neural networks that mimic the structure of the brain, the spiking neural network (SNN) is a network that imitates the information-processing method of biological neural networks. Recently, memristors have attracted attention as synaptic devices for neuromorphic computing systems. Among them, the ferroelectric doped-HfO₂-based ferroelectric tunnel junction (FTJ) is considered as a strong candidate for synaptic devices due to its advantages, such as complementary metal-oxide-semiconductor device/process compatibility, a simple two-terminal structure, and low power consumption. However, research on the spiking operations of FTJ devices for SNN applications is lacking. In this study, the implementation of long-term depression and potentiation as the spike timing-dependent plasticity (STDP) rule in the FTJ device was successful. Based on the measured data, a CrossSim simulator was used to simulate the classification of handwriting images. With a high accuracy of 95.79% for the Mixed National Institute of Standards and Technology (MNIST) dataset, the simulation results demonstrate that our device is capable of differentiating between handwritten images. This suggests that our FTJ device can be used as a synaptic device for implementing an SNN.

Keywords: FTJ; SNN; STDP; neuromorphic computing; synaptic devices.

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Memristor synapses based on green and pollution-free organic materials are expected to facilitate biorealistic neuromorphic computing and to be an important step toward the next generation of green electronics. Metalloporphyrin is an organic compound that widely exists in nature with good biocompatibility and stable chemical properties, and has already been used to fabricate memristors. However, the application of metalloporphyrin-based memristors as synaptic devices still faces challenges, such as realizing a high switching ratio, low power consumption, and bidirectional conductance modulation. We developed a memristor that improves the resistive switching (RS) characteristics of Zn(II)meso-tetra(4-carboxyphenyl) porphine (ZnTCPP) by combining it with deoxyribonucleic acid (DNA) in a composite film. The as-fabricated ZnTCPP-DNA-based device showed excellent RS memory characteristics with a sufficiently high switching ratio of up to ∼10⁴, super low power consumption of ∼39.56 nW, good cycling stability, and data retention capability. Moreover, bidirectional conductance modulation of the ZnTCPP-DNA-based device can be controlled by modulating the amplitudes, durations, and intervals of positive and negative pulses. The ZnTCPP-DNA-based device was used to successfully simulate a series of synaptic functions including long-term potentiation, long-term depression, spike time-dependent plasticity, paired-pulse facilitation, excitatory postsynaptic current, and human learning behavior, which demonstrates its potential applicability to neuromorphic devices. A two-layer artificial neural network was used to demonstrate the digit recognition ability of the ZnTCPP-DNA-based device, which reached 97.22% after 100 training iterations. These results create a new avenue for the research and development of green electronics and have major implications for green low-power neuromorphic computing in the future.

Keywords: artificial synapses; memristors; neuromorphic computing; porphyrin−DNA composite films; superlow power consumption.

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Memristors with controllable resistive switching (RS) behavior have been considered as promising candidates for synaptic devices in next-generation neuromorphic computing. In this work, two-terminal memristors with controllable digital and analog RS behavior are fabricated based on two-dimensional (2D) WSe₂ nanosheets. Under a relatively high operating voltage of 4 V, the memristor demonstrates stable and reliable non-volatile bipolar digital RS with a high switching ratio of 6.3 × 10⁴. On the other hand, under a relatively low operation voltage, the memristor exhibits analog RS with a series of tunable resistance states. The fabricated memristors can work as an artificial synapse with fundamental synaptic functions, such as long-term potentiation (LTP) and depression (LTD) as well as paired-pulse facilitation (PPF). More importantly, the memristor demonstrates high conductance modulation linearity with the calculated nonlinear parameter for conductance as-0.82 in the LTP process, which is beneficial to improving the accuracy of neuromorphic computing. Furthermore, the neuromorphic computing of file types and image recognition can be emulated based on a constructed three-layer artificial neural network (ANN) with a recognition accuracy that can reach up to 95.9% for small digits. In addition, memristors can be used to emulate the learning-forgetting experience of the human brain. Consequently, the memristor based on 2D WSe₂ nanosheets not only exhibits controllable RS behavior but also simulates synaptic functions and is expected to be a potential candidate for future neuromorphic computing applications.

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The best supercomputers in the world have less than 50,000 GPUs, how in the world is someone going to make an AI cluster with 1.2 million GPUs?

My thoughts on ethics and human-centric design in AI advancements.